pn-junction electrostatics practice problems
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A silicon p-n junction is uniformly doped with n-type N_D = 5.0e+17 cm^-3 on one side and p-type doping N_A 5.0e+15 cm^-3 on the other.

Find the following at room temperature:

• the built-in potential
• the total depletion-layer width at zero bias
• the depletion widths on the n- and p-sides
• the maximum magnitude of the electric field
• the capacitance at zero-bias

Note: For silicon,

• the relative permittivity is ε_r = 11.8
• the intrinsic carrier concentration is n_i = 6.000e+9 cm^-3
• the conduction band density-of-states is N_C = 2.800e+19 cm^-3
• the valence band density-of-states is N_V = 1.000e+19 cm^-3
• the band gap energy is E_G = 1.120 eV.

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