Ion Implantation practice problems
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Read the Ion implantation class notes.

Boron is implanted into a silicon wafer that has a background doping of 3x10¹⁴ cm^–3.

The implant energy is 90 keV. (See the notes for range and straggle plots.)

There is no anneal following the implant.

Determine the peak concentration, N_P, required so that the lower junction depth is at x_j1 = 0.471 μm.
Then calculate the required implant dose. If implant has an upper junction, calculate its location, x_j2.

Answer