Ion Implantation practice problems
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Read the Ion implantation class notes.
Antimony is implanted into a silicon wafer that has a background doping of 8x1015 cm–3.
The implant energy is 400 keV, and the implant dose is 1.0e+14 cm-2. (See the notes for range and straggle plots.)
After the implant, the wafer is annealed at 1025°C for 40 min.
(The Antimony diffusion pre-factor coefficient is Do = 4.58 cm2/s and the activation energy is EA = 3.88 eV.)
Determine the peak concentration and the junction depth(s) of the implanted profile before the anneal. The calculate the same quantities after the anneal.