Ion Implantation practice problems
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Read the Ion implantation class notes.
Phosphorus is implanted into a silicon wafer that has a background doping of 9x1015 cm–3.
The implant energy is 60 keV. (See the notes for range and straggle plots.)
There is no anneal following the implant.
Determine the dose needed to so that the implanted profile has a peak concentration of NP = 7x1019 cm–3.
Then calculate the corresponding junction depth(s).