Ion Implantation practice problems
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Read the Ion implantation class notes.
Antimony is implanted into a silicon wafer that has a background doping of 6x1014 cm–3.
The implant energy is 60 keV, and the implant dose is 6.0e+14 cm-2. (See the notes for range and straggle plots.)
There is no anneal following the implant.
Determine the peak concentration and the junction depth(s) of the implanted profile.