Ion Implantation practice problems
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Read the Ion implantation class notes.

Phosphorus is implanted into a silicon wafer that has a background doping of 9x10¹⁶ cm^–3.

The implant energy is 30 keV. (See the notes for range and straggle plots.)

There is no anneal following the implant.

Determine the dose needed to so that the implanted profile has a peak concentration of N_P = 8x10¹⁹ cm^–3.
Then calculate the corresponding junction depth(s).

Answer