Ion Implantation practice problems
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Read the Ion implantation class notes.
Phosphorus is implanted into a silicon wafer that has a background doping of 3x1015 cm–3.
The implant energy is 600 keV. (See the notes for range and straggle plots.)
There is no anneal following the implant.
Determine the dose needed to so that the implanted profile has a peak concentration of NP = 4x1018 cm–3.
Then calculate the corresponding junction depth(s).