Ion Implantation practice problems
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Read the Ion implantation class notes.
Arsenic is implanted into a silicon wafer that has a background doping of 2x1016 cm–3.
The implant energy is 600 keV. (See the notes for range and straggle plots.)
There is no anneal following the implant.
Determine the dose needed to so that the implanted profile has a peak concentration of NP = 6x1018 cm–3.
Then calculate the corresponding junction depth(s).