EE 432/532 Semiconductor Fabrication G. Tuttle

Oxidation practice problems
Refresh the page to get a new problem.

Read the Oxidation example calculations class notes.


A (100)-oriented silicon wafer has an intial oxide thickness of 150 nm.

The wafer will be oxidized at a temperature of 1050°C using wet oxidation.

How long should the oxidation last so that the final thickness of the oxide will be 1175 nm?

Answer